TK15J60U(F)

Производится
TK15J60U(F) - Toshiba
Увеличить
Краткое описание: N-CHANNEL MOSFET 15A 600V 300mR Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TK15J60U(F) is a N-CHANNEL MOSFET with a continuous drain current of 15A and a drain to source breakdown voltage of 600V. It has a drain to source resistance of 300mR and a maximum power dissipation of 170W. The device is packaged in a through hole package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 8ns
Packaging Rail/Tube
Rds On Max 300mR
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 950pF
Power Dissipation 170W
Radiation Hardening No
Max Power Dissipation 170W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 300mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.