TK16C60W,S1VQ
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Краткое описание:
N-CHANNEL MOSFET 600V 15.8A 130W TO-262-3 Through Hole
Дополнительная информация
The Toshiba TK16C60W,S1VQ is a single N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 130W and a continuous drain current of 15.8A. The device features a drain to source resistance of 160mR and a gate to source voltage of 30V. It is packaged in a TO-262-3 package and is available in a rail/tube packaging format.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.084199oz |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-262-3 |
| Package Quantity | 50 |
| Input Capacitance | 1.35nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 15.8A |
| Drain to Source Voltage (Vdss) | 600V |
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