TK16N60W,S1VF

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TK16N60W,S1VF - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 15.8A 130W TO-247-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK16N60W,S1VF is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 600V and a continuous drain current of 15.8A. The device is packaged in a TO-247-3 case and is suitable for through-hole mounting. It has a maximum power dissipation of 130W and a maximum on-resistance of 190mR.
RoHS Compliant
Mount Through Hole
Series DTMOSIV
Polarity N-CHANNEL
Fall Time 5ns
Packaging Rail/Tube
Rds On Max 190mR
Resistance 0.19R
Capacitance 1.35E-09F
Package/Case TO-247-3
Package Quantity 30
Input Capacitance 1.35nF
Turn-Off Delay Time 100ns
Max Power Dissipation 130W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 160mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 15.8A
Drain to Source Voltage (Vdss) 600V

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