TK20A60T(Q)
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Краткое описание:
600V 20A N-CH Power MOSFET TO-220
Дополнительная информация
N-channel enhancement mode power MOSFET, silicon, 600V drain-source voltage, 20A continuous drain current, and 190mΩ maximum drain-source resistance at 10V. Features DTMOS process technology, a single element per chip configuration, and a typical gate charge of 30nC at 10V. Packaged in a 3-pin TO-220NIS through-hole configuration with a 2.54mm pin pitch, this plastic package has dimensions of 10mm (L) x 4.5mm (W) x 15mm (H) and supports up to 45W power dissipation. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220NIS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.5 |
| Process Technology | DTMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 15 + 2.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 30nC |
| Typical Gate Charge @ Vgs | 30@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Input Capacitance @ Vds | 1580@10VpF |
| Maximum Continuous Drain Current | 20A |
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