TK20A60U(Q)

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TK20A60U(Q) - Toshiba
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Краткое описание: N-CHANNEL MOSFET 20A 600V 30V GS 45W Through Hole SC
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The Toshiba TK20A60U(Q) is a N-CHANNEL MOSFET with a continuous drain current of 20A and a drain to source breakdown voltage of 600V. It has a gate to source voltage of 30V and a threshold voltage of 3V. The device can handle a maximum power dissipation of 45W and operates within a temperature range of -55°C to 150°C. It is packaged in a SC case and is available in a lead-free version.
RoHS Not CompliantNo
Mount Through Hole
Polarity N-CHANNEL
Fall Time 100ns
Lead Free Lead Free
Packaging Rail/Tube
Package/Case SC
Package Quantity 50
Power Dissipation 45W
Threshold Voltage 3V
Radiation Hardening No
Turn-Off Delay Time 12ns
Reach SVHC Compliant Unknown
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 190mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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