TK20C60W,S1VQ

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TK20C60W,S1VQ - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 20A TO-262-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK20C60W,S1VQ is a single N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 165W and a continuous drain current of 20A. The device is packaged in a TO-262-3 case and is mounted through a hole. It has an input capacitance of 1.68nF and a drain to source resistance of 130mR.
RoHS Compliant
Mount Through Hole
Weight 0.084199oz
Polarity N-CHANNEL
Fall Time 6ns
Packaging Rail/Tube
Rds On Max 155mR
Package/Case TO-262-3
Package Quantity 50
Input Capacitance 1.68nF
Number of Channels 1
Turn-On Delay Time 50ns
Radiation Hardening No
Turn-Off Delay Time 100ns
Max Power Dissipation 165W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 130mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 600V

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