TK20V60W,LVQ

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TK20V60W,LVQ - Toshiba
Краткое описание: N-CHANNEL MOSFET 600V 20A 170mR 150°C Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK20V60W,LVQ is a single N-channel MOSFET with a maximum drain to source voltage of 600V and continuous drain current of 20A. It features a drain to source resistance of 170mR and an input capacitance of 1.68nF. The device is rated for operation over a temperature range of -55°C to 150°C and has a maximum power dissipation of 156W. The TK20V60W,LVQ is packaged in a DFN package and is available in tape and reel packaging for surface mount applications.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 6ns
Packaging Tape and Reel
Rds On Max 170mR
Package/Case DFN
Package Quantity 1
Input Capacitance 1.68nF
Number of Channels 1
Turn-On Delay Time 50ns
Radiation Hardening No
Turn-Off Delay Time 100ns
Max Power Dissipation 156W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 170mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 600V

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