TK2A65D(STA4,Q,M)
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Краткое описание:
MOSFET N-Channel 650V 2A 30W TO-220-3 Through Hole
Дополнительная информация
The Toshiba TK2A65D(STA4,Q,M) is a MOSFET N-Channel device with a maximum drain to source voltage of 650V and a continuous drain current of 2A. It features a maximum power dissipation of 30W and a maximum operating temperature of 150°C. The device is packaged in a TO-220-3 package and is mounted through a hole. The TK2A65D(STA4,Q,M) has an input capacitance of 380pF and a fall time of 7ns. It is available in a packaging quantity of 50 units per rail/tube.
| RoHS | Compliant |
| Mount | Through Hole |
| Fall Time | 7ns |
| Packaging | Rail/Tube |
| Rds On Max | 3.26R |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 380pF |
| Radiation Hardening | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 650V |
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