TK2Q60D(Q)
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Краткое описание:
600V 2A TO-251-3 p-MOSFET
Дополнительная информация
The Toshiba TK2Q60D(Q) is a 600V p-MOSFET with a continuous drain current of 2A. It features a TO-251-3 package and is designed for through-hole mounting. The device has an input capacitance of 280pF and a maximum power dissipation of 60W. It operates over a temperature range of -55°C to 150°C and is available in a lead-free package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.3mm |
| Height | 5.5mm |
| Length | 6.5mm |
| Series | p-MOSVII |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.3R |
| Package/Case | TO-251-3 |
| Input Capacitance | 280pF |
| Radiation Hardening | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
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