TK31A60W,S4VX

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TK31A60W,S4VX - Toshiba
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Краткое описание: N-Channel Power MOSFET 600V 30.8A TO-220-3 Through Hole
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK31A60W,S4VX is a 600V N-Channel Power MOSFET with a continuous drain current of 30.8A and a maximum power dissipation of 45W. It features a TO-220-3 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum drain to source breakdown voltage of 600V.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 8.5ns
Packaging Rail/Tube
Rds On Max 88mR
Capacitance 3E-09F
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 3nF
Power Dissipation 45W
Turn-Off Delay Time 165ns
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 73mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30.8A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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