TK31E60W,S1VX

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TK31E60W,S1VX - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 30.8A TO-220
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TK31E60W,S1VX is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 600V and a Continuous Drain Current of 30.8A. It has a Drain to Source Resistance of 73mR and a Gate to Source Voltage of 30V. The device is packaged in a TO-220 case and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is suitable for high-power applications and has a maximum power dissipation of 230W.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 8.5ns
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-220
Package Quantity 50
Input Capacitance 3nF
Power Dissipation 230W
Turn-Off Delay Time 165ns
Max Power Dissipation 230W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 73mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30.8A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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