TK31J60W,S1VQ
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Краткое описание:
N-CHANNEL Power MOSFET 600V 30.8A 230W Through Hole
Дополнительная информация
The Toshiba TK31J60W,S1VQ is a high-power N-CHANNEL MOSFET with a maximum drain-to-source breakdown voltage of 600V and a continuous drain current of 30.8A. It has a maximum power dissipation of 230W and a drain-to-source resistance of 88 milliohms. The device is packaged in a through-hole package and is available in quantities of 25. It operates over a wide temperature range and meets the requirements of various industry standards.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 88mR |
| Capacitance | 3E-09F |
| Package Quantity | 25 |
| Input Capacitance | 3nF |
| Power Dissipation | 230W |
| Max Power Dissipation | 230W |
| Drain to Source Resistance | 88mR |
| Continuous Drain Current (ID) | 30.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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