TK32E12N1,S1X

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TK32E12N1,S1X - Toshiba
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Краткое описание: N-CHANNEL 120V 60A TO-220 Transistor
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK32E12N1,S1X is a TO-220 packaged N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 120V and a continuous drain current of 60A. The transistor also features a drain to source resistance of 11mR and a maximum power dissipation of 98W.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 14ns
Packaging Rail/Tube
Rds On Max 13.8mR
Package/Case TO-220
Package Quantity 50
Input Capacitance 2nF
Power Dissipation 98W
Turn-Off Delay Time 43ns
Max Power Dissipation 98W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 11mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 120V
Drain to Source Breakdown Voltage 120V

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