TK34A10N1,S4X

Производится
TK34A10N1,S4X - Toshiba
Краткое описание: N-CHANNEL MOSFET 100V 34A 7.9mR 35W TO-220-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK34A10N1,S4X is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 34A and a drain to source voltage of 100V. The device features a drain to source resistance of 7.9mR and a maximum power dissipation of 35W.
RoHS Not CompliantNo
Mount Through Hole
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 18ns
Packaging Rail/Tube
Rds On Max 9.5mR
Package/Case TO-220-3
RoHS Compliant No
Package Quantity 50
Input Capacitance 2.6nF
Number of Channels 1
Turn-On Delay Time 31ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7.9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 34A
Drain to Source Voltage (Vdss) 100V

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