TK35N65W5,S1F
Производится
Краткое описание:
N-CHANNEL MOSFET 650V 35A 30V 4.1nF 270W TO-247-3
Дополнительная информация
The Toshiba TK35N65W5,S1F is a 650V N-channel MOSFET with a continuous drain current of 35A and a gate to source voltage of 30V. It features an input capacitance of 4.1nF and a maximum power dissipation of 270W. The device is packaged in a TO-247-3 case and is rated for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 95mR |
| Package/Case | TO-247-3 |
| Package Quantity | 30 |
| Input Capacitance | 4.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 110ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150ns |
| Max Power Dissipation | 270W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
