TK3A65D(STA4,Q,M)
Производится
Увеличить
Краткое описание:
650V 3A TO-220-3 Through Hole MOSFET
Дополнительная информация
The Toshiba TK3A65D(STA4,Q,M) is a 650V MOSFET with a continuous drain current of 3A. It features a TO-220-3 package and is designed for through hole mounting. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It can dissipate up to 35W of power. The TK3A65D(STA4,Q,M) has an input capacitance of 540pF and a maximum Rds on resistance of 2.25R.
| RoHS | Compliant |
| Mount | Through Hole |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 2.25R |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 540pF |
| Radiation Hardening | No |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
