TK40P04M1(T6RSS-Q)

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TK40P04M1(T6RSS-Q) - Toshiba
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Краткое описание: 40V 40A N-CH MOSFET, 10.3mR Rds On, TO-252
Производитель Toshiba
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 40V drain-source voltage, 40A continuous drain current. Features low 10.3mR drain-to-source resistance and 47W max power dissipation. Operates from -55°C to 150°C, with fast switching times including 18ns fall time, 27ns turn-on delay, and 63ns turn-off delay. Packaged in TO-252-3 for surface mount applications.
RoHS Not CompliantNo
Mount Surface Mount, Through Hole
Width 6.1mm
Height 2.3mm
Length 10mm
Series U-MOSVI-H
Polarity N-CHANNEL
Fall Time 18ns
Packaging Tape and Reel
Rds On Max 11mR
Package/Case TO-252-3
RoHS Compliant No
Package Quantity 2000
Input Capacitance 1.92nF
Number of Channels 1
Turn-On Delay Time 27ns
Radiation Hardening No
Turn-Off Delay Time 63ns
Max Power Dissipation 47W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 40V

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