TK56A12N1,S4X

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TK56A12N1,S4X - Toshiba
Краткое описание: N-CHANNEL MOSFET TO-220-3 56A 120V 45W
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TK56A12N1,S4X is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 56A and a drain to source voltage of 120V. The device features a maximum power dissipation of 45W and a drain to source resistance of 6.2mR. It is available in a through hole mount package with a package quantity of 50 per rail/Tube packaging.
RoHS Compliant
Mount Through Hole
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 23ns
Packaging Rail/Tube
Rds On Max 7.5mR
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 4.2nF
Number of Channels 1
Turn-On Delay Time 45ns
Radiation Hardening No
Turn-Off Delay Time 73ns
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 56A
Drain to Source Voltage (Vdss) 120V

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