TK56E12N1,S1X
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Краткое описание:
N-CHANNEL MOSFET, 56A, 120V, 5.8mR, TO-220-3
Дополнительная информация
The Toshiba TK56E12N1,S1X is a high-power N-channel MOSFET with a maximum drain current of 56A and a breakdown voltage of 120V. It features a low on-resistance of 7mR and a fast switching time with a fall time of 23ns. The device is packaged in a TO-220-3 case and is suitable for through-hole mounting. The TK56E12N1,S1X is rated for a maximum power dissipation of 168W and operates over a temperature range of -40°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Packaging | Rail/Tube |
| Rds On Max | 7mR |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 4.2nF |
| Power Dissipation | 168W |
| Turn-Off Delay Time | 73ns |
| Max Power Dissipation | 168W |
| Drain to Source Resistance | 5.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 120V |
| Drain to Source Breakdown Voltage | 120V |
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