TK58A06N1
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Краткое описание:
N-CH MOSFET 60V 105A TO-220SIS Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 105A continuous drain current. This single-element silicon transistor utilizes U-MOS VIII-H process technology and is housed in a TO-220SIS package with a through-hole mounting style. Key specifications include a maximum drain-source resistance of 5.4 mOhm at 10V and a typical gate charge of 46 nC at 10V. The component offers a maximum power dissipation of 35000 mW and operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220SIS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.5 |
| Process Technology | U-MOS VIII-H |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Seated Plane Height (mm) | 17 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 46nC |
| Typical Gate Charge @ Vgs | 46@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 5.4@10VmOhm |
| Typical Input Capacitance @ Vds | 3400@30VpF |
| Maximum Continuous Drain Current | 105A |
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