TK5R3A06PL
Краткое описание:
60 V 56 A N-Channel Power MOSFET in TO-220SIS
Дополнительная информация
This silicon N-channel U-MOS-H power MOSFET is rated for 60 V drain-source voltage and 56 A continuous drain current at Tc = 25 °C. It provides low on-resistance of 4.1 mΩ typical at VGS = 10 V and supports high-speed switching with 36 nC typical total gate charge and 32 nC typical output charge. The device is supplied in a TO-220SIS package and is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. Maximum channel temperature is 175 °C and power dissipation is 36 W at Tc = 25 °C.
| Package | TO-220SIS |
| Technology | U-MOS-H |
| Transistor Type | N-Channel |
| Output Charge (Qoss) | 32 typnC |
| Power Dissipation (PD) | 36W |
| Total Gate Charge (Qg) | 36 typnC |
| Input Capacitance (Ciss) | 2380 typpF |
| Output Capacitance (Coss) | 470 typpF |
| Gate-Source Voltage (VGSS) | ±20V |
| Pulsed Drain Current (IDP) | 280A |
| Drain-Source Voltage (VDSS) | 60V |
| Gate Threshold Voltage (Vth) | 1.5 to 2.5V |
| Continuous Drain Current (ID) | 56A |
| Channel-to-Case Thermal Resistance | 4.16 max°C/W |
| Reverse Transfer Capacitance (Crss) | 50 typpF |
| Drain-Source On-Resistance @ VGS=10V | 4.1 typ, 5.3 maxmΩ |
| Channel-to-Ambient Thermal Resistance | 62.5 max°C/W |
| Drain-Source On-Resistance @ VGS=4.5V | 6.2 typ, 9.3 maxmΩ |
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