TK6A53D(STA4,Q,M)
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Краткое описание:
MOSFET N-Channel 525V 6A 30V 1.3R 35W TO-220-3 Through Hole
Дополнительная информация
The TK6A53D(STA4,Q,M) is a TO-220-3 packaged MOSFET from Toshiba, rated for 525V drain to source voltage and 6A continuous drain current. It has a maximum power dissipation of 35W and a maximum operating temperature of 150°C. The device is available in a through hole mount configuration and is packaged in a rail/tube format with 50 units per package. The MOSFET has a gate to source voltage rating of 30V and an input capacitance of 600pF, with a fall time of 8ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.3R |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 600pF |
| Radiation Hardening | No |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 525V |
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