TK6A55DA(STA4,Q,M)

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TK6A55DA(STA4,Q,M) - Toshiba
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Краткое описание: MOSFET N-Channel 550V 5.5A 30V TO-220-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK6A55DA(STA4,Q,M) is a TO-220-3 packaged MOSFET with a maximum drain to source voltage of 550V and continuous drain current of 5.5A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is designed for through hole mounting and has a maximum power dissipation of 35W.
RoHS Compliant
Mount Through Hole
Fall Time 8ns
Packaging Rail/Tube
Rds On Max 1.48R
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 600pF
Radiation Hardening No
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.5A
Drain to Source Voltage (Vdss) 550V

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