TK6Q60W,S1VQ
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Краткое описание:
N-CHANNEL DTMOSIV MOSFET 600V 6.2A 820mR 150°C TO-251-3
Дополнительная информация
The Toshiba TK6Q60W,S1VQ is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 6.2A and a drain to source voltage of 600V. The device has a maximum power dissipation of 60W and a gate to source voltage of 30V. It is packaged in a TO-251-3 case and is suitable for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | DTMOSIV |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Rail/Tube |
| Rds On Max | 820mR |
| Resistance | 0.82R |
| Capacitance | 3.9E-10F |
| Package/Case | TO-251-3 |
| Package Quantity | 75 |
| Input Capacitance | 390pF |
| Turn-Off Delay Time | 55ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 680mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 600V |
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