TK8A50DA(STA4,Q,M)
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Краткое описание:
N-CHANNEL MOSFET TO-220-3 7.5A 500V 35W Through Hole
Дополнительная информация
The Toshiba TK8A50DA is a TO-220-3 packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 7.5A and a drain to source breakdown voltage of 500V. The device has a maximum power dissipation of 35W and a gate to source voltage of 30V. It is designed for through hole mounting and is available in a package quantity of 50.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.04R |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 700pF |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 760mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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