TK8A65D(STA4,Q,M)

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TK8A65D(STA4,Q,M) - Toshiba
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Краткое описание: MOSFET N-Channel 650V 8A 45W TO-220-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK8A65D(STA4,Q,M) is a MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 650V and a continuous drain current of 8A. The device has a maximum power dissipation of 45W and a gate to source voltage of 30V. The TO-220-3 package is suitable for through hole mounting. The MOSFET has an input capacitance of 1.35nF and a fall time of 15ns.
RoHS Compliant
Mount Through Hole
Fall Time 15ns
Packaging Bulk
Rds On Max 840mR
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 1.35nF
Radiation Hardening No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 650V

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