TK8P60W,RVQ

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TK8P60W,RVQ - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 8A 420mR DPAK Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TK8P60W,RVQ is a N-CHANNEL MOSFET from Toshiba with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 80W and a continuous drain current of 8A. The device is packaged in a DPAK package and is available in a tape and reel format. It has a drain to source resistance of 420mR and a drain to source voltage of 600V.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 5.5ns
Packaging Tape and Reel
Rds On Max 500mR
Package/Case DPAK
Package Quantity 1
Input Capacitance 570pF
Turn-Off Delay Time 70ns
Max Power Dissipation 80W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 420mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 600V

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