TK8Q60W,S1VQ
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Краткое описание:
N-CHANNEL DTMOSIV MOSFET 600V 8A 0.5R 150°C TO-251-3
Дополнительная информация
The Toshiba TK8Q60W,S1VQ is an N-channel DTMOSIV MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 80W and a continuous drain current of 8A. The device features a drain to source voltage of 600V and a drain to source resistance of 420mR. It is packaged in a TO-251-3 package and is available in a rail/Tube packaging with 75 units per package. The device has a gate to source voltage of 30V and an input capacitance of 570pF.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | DTMOSIV |
| Polarity | N-CHANNEL |
| Fall Time | 5.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 500mR |
| Resistance | 0.5R |
| Capacitance | 5.7E-10F |
| Package/Case | TO-251-3 |
| Package Quantity | 75 |
| Input Capacitance | 570pF |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 420mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 600V |
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