TLP531-Y
Снят с производства
Краткое описание:
Photocoupler with GaAs infrared LED and phototransistor output in 6-lead DIP
Дополнительная информация
Photocoupler based on a gallium arsenide infrared emitting diode optically coupled to a phototransistor in a six-lead plastic DIP. Collector-emitter voltage is rated at 55 V minimum with a current transfer ratio of 50% minimum (100% minimum for the GB rank). Isolation voltage is 2500 Vrms minimum and the coupler is UL recognized under UL1577 file E67349. Forward current rating is 70 mA with a maximum forward voltage of 1.3 V and power dissipation of 150 mW. Operating temperature spans -25 to 85 degrees Celsius and the device weighs 0.4 g. Typical applications include programmable controllers, AC/DC input modules, and solid state relays.
| Ul | UL1577, file no. E67349 |
| Weight | 0.4g |
| Package | 6-lead plastic DIP (11-7A8) |
| Forward current | 70mA |
| Photocoupler type | GaAs IRed and phototransistor |
| Power dissipation | 150mW |
| Number of channels | 1ch |
| Forward voltage (max) | 1.3V |
| Isolation voltage (min) | 2500Vrms |
| Operating temperature range | -25 to 85degC |
| Current transfer ratio (min) | 50% |
| Collector-emitter voltage (min) | 55V |
| Current transfer ratio, GB rank (min) | 100% |
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