TN0106N3-G

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TN0106N3-G - Microchip
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Краткое описание: N-CH JFET, 60V, 350mA, 3R, TO-92
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel small signal MOSFET in a TO-92 package, featuring a continuous drain current of 350mA and a drain-to-source breakdown voltage of 60V. This through-hole component offers a low drain-to-source resistance of 3 Ohms, with turn-on delay time of 2ns and fall time of 3ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 3R
Package/Case TO-92
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 60pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 2ns
Radiation Hardening No
Turn-Off Delay Time 6ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 350mA
Drain to Source Breakdown Voltage 60V

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