TN0110N3-G

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TN0110N3-G - Microchip
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Краткое описание: N-CH MOSFET 100V 0.35A 3R TO-92
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel silicon MOSFET, through-hole mount, in a TO-92 package. Features 100V drain-to-source breakdown voltage and 350mA continuous drain current. Offers 3 Ohm drain-to-source resistance and 60pF input capacitance. Operates across a -55°C to 150°C temperature range with 1W maximum power dissipation.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 3R
Package/Case TO-92
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 60pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 2ns
Radiation Hardening No
Turn-Off Delay Time 6ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 350mA
Drain to Source Breakdown Voltage 100V

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