TN0200K-T1-E3

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TN0200K-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel JFET, 20V, 730mA, SOT-23-3, Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel JFET for general-purpose small signal applications. Features a 20V drain-source breakdown voltage and 730mA continuous drain current. Offers a low drain-source on-resistance of 400mΩ (max) and a threshold voltage of 600mV. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 350mW.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 0.04inch
Length 0.119inch
Series TrenchFET®
Current 12A
Voltage 20V
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 400mR
Nominal Vgs 600mV
Termination SMD/SMT
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 350mW
Threshold Voltage 600mV
Number of Elements 1
Turn-On Delay Time 17ns
Turn-Off Delay Time 55ns
Reach SVHC Compliant Unknown
Max Power Dissipation 350mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 200mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 730mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 400mR
Drain to Source Breakdown Voltage 20V

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