TN0201K-T1-E3

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TN0201K-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel JFET, 20V, 420mA, SOT-23-3, Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel JFET for general-purpose small signal applications. Features 20V drain-source breakdown voltage and 420mA continuous drain current. Offers a maximum drain-source on-resistance of 1.4 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in a SOT-23-3 surface-mount package, supplied on tape and reel. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1R
Nominal Vgs 2V
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 350mW
Threshold Voltage 2V
Number of Elements 1
Turn-On Delay Time 4.5ns
Radiation Hardening No
Turn-Off Delay Time 9ns
Reach SVHC Compliant Unknown
Max Power Dissipation 350mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 800mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 420mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 1.4R
Drain to Source Breakdown Voltage 20V

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