TN2106K1-G

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TN2106K1-G - Microchip
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Краткое описание: 60V 280mA N-CH JFET SOT-23
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel, small-signal JFET transistor in a SOT-23 package. Features 60V drain-to-source breakdown voltage and 280mA continuous drain current. Offers a low 2.5 Ohm drain-to-source resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 360mW. Ideal for surface mount applications.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.95mm
Length 2.9mm
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 5ns
Packaging Tape and Reel
Rds On Max 2.5R
Package/Case SOT-23
Package Quantity 3000
Input Capacitance 50pF
Power Dissipation 360mW
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 3ns
Radiation Hardening No
Turn-Off Delay Time 6ns
Max Power Dissipation 360mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 280mA
Drain to Source Breakdown Voltage 60V

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