TN2106N3-G

Производится
TN2106N3-G - Microchip
Увеличить
Краткое описание: 60V 300mA N-CH JFET TO-92 Through Hole
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel small signal MOSFET in a TO-92-3 package, featuring a continuous drain current of 300mA and a drain-to-source breakdown voltage of 60V. This through-hole mounted component offers a low drain-to-source resistance of 2.5 Ohms, with fast switching speeds including a 3ns turn-on delay and 5ns fall time. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 740mW and an input capacitance of 50pF.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 5ns
Packaging Bulk
Rds On Max 2.5R
Package/Case TO-92-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 50pF
Power Dissipation 740mW
Number of Channels 1
Turn-On Delay Time 3ns
Turn-Off Delay Time 6ns
Max Power Dissipation 740mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 300mA
Drain to Source Breakdown Voltage 60V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.