TN5325N8-G

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TN5325N8-G - Microchip
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Краткое описание: N-CHANNEL MOSFET, 250V, 316mA, SOT-89-3
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

The TN5325N8-G is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a drain to source breakdown voltage of 250V and a continuous drain current of 316mA. The device has a drain to source resistance of 7 ohms and a maximum power dissipation of 1.6W. The SOT-89-3 package has dimensions of 1.6mm height, 2.6mm width, and 4.6mm length.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001862oz
Polarity N-CHANNEL
Fall Time 15ns
Packaging Tape and Reel
Package/Case SOT-89-3
Package Quantity 2000
Power Dissipation 1.6W
Number of Channels 1
Turn-On Delay Time 20ns
Turn-Off Delay Time 25ns
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 316mA
Drain to Source Breakdown Voltage 250V

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