TP0101K-T1-E3
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Краткое описание:
P-CH JFET, 20V, 580mA, SOT-23-3, Small Signal
Дополнительная информация
P-channel, small-signal JFET transistor for general-purpose applications. Features a continuous drain current of 580mA and a drain-to-source breakdown voltage of -20V. Offers a maximum power dissipation of 350mW and a low on-resistance of 650mΩ. Packaged in a compact SOT-23-3 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 650mR |
| Nominal Vgs | -700mV |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Threshold Voltage | 700mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 420mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 580mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 650mR |
| Drain to Source Breakdown Voltage | -20V |
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