TP0610K-T1-E3
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Краткое описание:
P-CH JFET, 60V, 185mA, 6R, TO-236, SM
Дополнительная информация
P-channel JFET for general-purpose small signal applications. Features a -60V drain-source breakdown voltage and a continuous drain current of 185mA. Surface mountable in a TO-236 package, this device offers a maximum power dissipation of 350mW and a drain-source on-resistance of 10 Ohms. Operating temperature range is -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6R |
| Nominal Vgs | -3V |
| Package/Case | TO-236 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 23pF |
| Power Dissipation | 350mW |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 185mA |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 10R |
| Drain to Source Breakdown Voltage | -60V |
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