TP2520N8-G
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Краткое описание:
P-CH MOSFET, -200V, 260mA, 12R, SOT-89, TO-243AA
Дополнительная информация
P-channel power MOSFET, TO-243AA package, offering -200V drain-source breakdown voltage and 12 Ohm drain-source resistance. Features 260mA continuous drain current, 1.6W power dissipation, and operates from -55°C to 150°C. Surface mount design with fast switching times, including 10ns turn-on delay and 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001862oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Package Quantity | 2000 |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Voltage (Vdss) | -200V |
| Drain to Source Breakdown Voltage | -200V |
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