TP2635N3-G
Производится
Увеличить
Краткое описание:
P-CH JFET, 350V, 180mA, 15R, TO-92
Дополнительная информация
P-channel JFET with 350V drain-source breakdown voltage and 180mA continuous drain current. Features 15 Ohm drain-source resistance (Rds On Max) and 1W maximum power dissipation. This small signal transistor is housed in a TO-92-3 package for through-hole mounting. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 40ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.21mm |
| Weight | 0.016oz |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Packaging | Bulk |
| Rds On Max | 15R |
| Package/Case | TO-92-3 |
| Package Quantity | 1000 |
| Input Capacitance | 300pF |
| Power Dissipation | 1W |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Voltage (Vdss) | 350V |
| Drain to Source Breakdown Voltage | -350V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
