TP5322K1-G
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Краткое описание:
120mA, -220V, P-CH, Si BJT, SOT-23-3, SM
Дополнительная информация
P-CHANNEL MOSFET, SOT-23-3 package, featuring a continuous drain current of 120mA and a drain-to-source breakdown voltage of -220V. This surface mount component offers a maximum power dissipation of 360mW and a drain-to-source resistance (Rds On Max) of 12 Ohms. Operating across a wide temperature range from -55°C to 150°C, it includes a gate-to-source voltage capability of 20V and input capacitance of 110pF. Switching characteristics include a turn-on delay time of 10ns and a fall time of 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.95mm |
| Length | 2.9mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 12R |
| Package/Case | SOT-23-3 |
| Package Quantity | 3000 |
| Input Capacitance | 110pF |
| Power Dissipation | 360mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | -220V |
| Drain to Source Breakdown Voltage | -220V |
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