TP5322N8-G
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Краткое описание:
P-CH MOSFET, 220V, 260mA, 12R, TO-243AA, SM
Дополнительная информация
P-channel power MOSFET in TO-243AA surface mount package. Features 220V drain-to-source breakdown voltage, 260mA continuous drain current, and 12 Ohm drain-to-source resistance (Rds On Max). Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.6W. Includes 10ns turn-on delay, 20ns turn-off delay, and 15ns fall time. Input capacitance is 110pF, with a 20V gate-to-source voltage rating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001862oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 12R |
| Resistance | 12R |
| Package/Case | TO-243AA |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 110pF |
| Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Voltage (Vdss) | 220V |
| Drain to Source Breakdown Voltage | -220V |
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