TPC6006-H(TE85L,F)
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Краткое описание:
40V 3.9A N-CH MOSFET, 75mR Rds On, SOT-23-6
Дополнительная информация
N-channel MOSFET, 40V drain-source breakdown voltage, 3.9A continuous drain current, and 75mΩ drain-source resistance. Features a 2.3V nominal gate-source threshold voltage and 3ns fall time. Packaged in a compact SOT-23-6 surface-mount case with dimensions of 2.9mm length, 1.6mm width, and 0.7mm height. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.2W.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.7mm |
| Length | 2.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Nominal Vgs | 2.3V |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Package Quantity | 3000 |
| Input Capacitance | 251pF |
| Power Dissipation | 2.2W |
| Threshold Voltage | 2.3V |
| Dual Supply Voltage | 40V |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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