TPC6102(T5LMURATA)
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Краткое описание:
P-CH MOSFET 30V 4.5A Si SOT VS 6-Pin SM
Дополнительная информация
P-channel enhancement mode power MOSFET, featuring U-MOS II process technology. This single element transistor offers a maximum drain-source voltage of 30V and a continuous drain current of 4.5A. Housed in a 6-pin VS package (SOT family), it supports surface mounting with dimensions of 2.9mm (L) x 1.6mm (W) x 0.7mm (H). Key specifications include a maximum drain-source resistance of 60mOhm at 10V and a maximum power dissipation of 2200mW, operating across a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| Package Width (mm) | 1.6 |
| Process Technology | U-MOS II |
| Package Family Name | SOT |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 11nC |
| Typical Gate Charge @ Vgs | 11@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 60@10VmOhm |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Continuous Drain Current | 4.5A |
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