TPC6109-H(TE85L,FM)
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Краткое описание:
P-CH MOSFET, 30V, 5A, Si, SOT, Surface Mount
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 5A continuous drain current. This single element silicon MOSFET is housed in a compact 6-pin VS package (SOT family), measuring 2.9mm x 1.6mm x 0.7mm, designed for surface mounting. Key electrical characteristics include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 59mΩ at 10V, and typical gate charge values of 12.3nC at 10V. It offers a maximum power dissipation of 2200mW and operates within a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2002/95/EC |
| Package Width (mm) | 1.6 |
| Package Family Name | SOT |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2.9 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 12.3nC |
| Typical Gate Charge @ Vgs | 12.3@10V|7.2@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 59@10VmOhm |
| Typical Input Capacitance @ Vds | 490@10VpF |
| Maximum Continuous Drain Current | 5A |
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