TPC6110
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Краткое описание:
P-CH MOSFET 30V 4.5A Si SOT VS 6-Pin SM
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 4.5A continuous drain current. This single element silicon transistor utilizes U-MOS VI process technology and is housed in a 6-pin VS package (SOT family) with surface mount configuration. Key specifications include a maximum gate-source voltage of 20V, a maximum drain-source on-resistance of 56 mOhm at 10V, and a maximum power dissipation of 2200 mW. Operating temperature range spans from -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 1.6 |
| Process Technology | U-MOS VI |
| Package Family Name | SOT |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2.9 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14nC |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 56@10VmOhm |
| Typical Input Capacitance @ Vds | 510@10VpF |
| Maximum Continuous Drain Current | 4.5A |
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