TPC8005-H(T2LSONY)
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Краткое описание:
N-CH MOSFET 30V 11A Si 8-Pin SMT Power
Дополнительная информация
N-channel enhancement mode power MOSFET, featuring a 30V drain-source voltage and 11A continuous drain current. This single MOSFET component is housed in an 8-pin 2-6J1B surface-mount plastic package with a 5.5mm maximum length and 4.4mm width. Key specifications include a maximum drain-source on-resistance of 16mΩ at 10V, typical gate charge of 20nC, and typical input capacitance of 1150pF. Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | 2-6J1B |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Package Length (mm) | 5.5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20nC |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Input Capacitance @ Vds | 1150@10VpF |
| Maximum Continuous Drain Current | 11A |
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