TPC8014(T2LIBM2,M)

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TPC8014(T2LIBM2,M) - Toshiba
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Краткое описание: N-CH MOSFET 30V 11A SOP 8-Pin Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET, 30V drain-source voltage, 11A continuous drain current. Features 14mOhm maximum drain-source resistance at 10V Vgs, 39nC typical gate charge, and 1860pF typical input capacitance. Packaged in an 8-pin SOP with gull-wing leads for surface mounting, offering a maximum power dissipation of 1900mW and operating temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 39nC
Typical Gate Charge @ Vgs 39@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 14@10VmOhm
Typical Input Capacitance @ Vds 1860@10VpF
Maximum Continuous Drain Current 11A

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