TPC8039-H(TE12L,QM)

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TPC8039-H(TE12L,QM) - Toshiba
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Краткое описание: N-CH MOSFET 30V 17A 8-Pin SOP U-MOS VI-H
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET in an 8-pin SOP package, featuring a 30V drain-source voltage and 17A continuous drain current. This surface-mount component utilizes U-MOS VI-H process technology and offers a low drain-source on-resistance of 6mΩ at 10V. Key specifications include a typical gate charge of 36nC at 10V and an input capacitance of 2600pF at 10V. The plastic SOP package measures 5.5mm x 4.4mm x 1.5mm with a 1.27mm pin pitch.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Process Technology U-MOS VI-H
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 36nC
Typical Gate Charge @ Vgs 36@10V|18@5VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2.3V
Maximum Drain Source Resistance 6@10VmOhm
Typical Input Capacitance @ Vds 2600@10VpF
Maximum Continuous Drain Current 17A

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