TPC8119(TE12L,Q,M)
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Краткое описание:
P-CH MOSFET 30V 10A SOP 8-Pin Surface Mount
Дополнительная информация
P-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount component utilizes U-MOS V process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 13mΩ at 10V, and a maximum power dissipation of 1900mW. The package dimensions are 5.5mm (L) x 4.4mm (W) x 1.5mm (H) with a 1.27mm pin pitch.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.4 |
| Process Technology | U-MOS V |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1.5 |
| Package Length (mm) | 5.5(Max) |
| Seated Plane Height (mm) | 1.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 40nC |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 13@10VmOhm |
| Typical Input Capacitance @ Vds | 1560@10VpF |
| Maximum Continuous Drain Current | 10A |
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